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igbt trenchstop tm p erformance technology IGW30N60TP 600vigbttrenchstop tm p erformance series datasheet industrialpowercontrol
2 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 highspeedigbtintrenchandfieldstoptechnology features: trenchstop tm technologyoffering ?verylowv cesat ?lowturn-offlosses ?shorttailcurrent ?lowemi ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?drives ?solarinverters ?uninterruptiblepowersupplies ?converterswithmediumswitchingfrequency keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IGW30N60TP 600v 30a 1.6v 175c g30dtp pg-to247-3 g c e g c e
3 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 4.. t dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 31,. 16,. pulsedcollectorcurrent, t p limitedby t vjmax 1) i cpuls 7.,. rsplmddqdcmncprglepc v ce 600v, t vj 175c, t p =1s 1) 7.,. ercckgrrcptmjrec v ge ?0. t qfmpragpasgrugrfqrlbrgkc v ge =15.0v, v cc 400v jjmucblskcpmdqfmpragpasgrq:/... rgkccrucclqfmpragpasgrq8 3 t t vj =150c t sc 3 q powerdissipation t c =25c powerdissipation t c =100c p tot 0..,. /..,. u mncprglehslargmlrckncprspc t vj 2.,,,)/53 a qrmpecrckncprspc t stg 33,,,)/3. a qmjbcpglerckncprspc utcqmjbcpgle/,4kk.,.41gl,dpmkaqcdmp/.q 04. a kmslrglermposck1qapcu kvgkskmdkmslrglenpmacqqcq81 m l thermalresistance value min. typ. max. parameter symbol conditions unit r th characteristics gerrfcpkjpcgrlac hslargmlac r th(j-c) .,3. .,53 i-u / bcdglcbwbcqgel,lmrqshcarrmnpmbsargmlrcqr,
5 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage (br)ces v ge =0v, i c =2.00ma 600 - - v collector-emitter saturation voltage cesat v ge =15.0v, i c =30.0a t vj =25c t vj =175c - - 1.60 1.94 1.80 - v gate-emitter threshold voltage ge(th) i c =0.48ma, v ce = v ge 4.1 5.1 5.7 v zero gate voltage collector current k ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - - 40 - a gate-emitter leakage current k ges v ce =0v, v ge =20v - - 100 na transconductance i fs v ce =20v, i c =30.0a - 26.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance e ies - 1050 - output capacitance e oes - 45 - reverse transfer capacitance e res - 36 - ce =25v, v ge =0v,f=1mhz pf gate charge s g v cc =480v, i c =30.0a, v ge =15v - 130.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case n e - 13.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 1.0s k c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =150c - 137 - a switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time v d(on) - 15 - ns rise time v r - 21 - ns turn-off delay time v d(off) - 179 - ns fall time v f - 12 - ns turn-on energy g on - 0.71 - mj turn-off energy g off - 0.42 - mj total switching energy g ts - 1.13 - mj v vj =25c, v cc =400v, i c =30.0a, v ge =0.0/15.0v, r g(on) =10.5 , r g(off) =10.5 , l =32nh, c =60pf l , c fromfig.e energy losses include tail and diode (ikw30n60dtp) reverse recovery.
6 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time v d(on) - 15 - ns rise time v r - 23 - ns turn-off delay time v d(off) - 220 - ns fall time v f - 59 - ns turn-on energy g on - 0.99 - mj turn-off energy g off - 0.74 - mj total switching energy g ts - 1.73 - mj v vj =175c, v cc =400v, i c =30.0a, v ge =0.0/15.0v, r g(on) =10.5 , r g(off) =10.5 , l =32nh, c =60pf l , c fromfig.e energy losses include tail and diode (ikw30n60dtp) reverse recovery.
7 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t j 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.1 1 10 100 1000 0.1 1 10 100 dc figure 2. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 25 50 75 figure 4. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 0 10 20 30 40 50 60 70 80 90 v ge =20v 15v 13v 11v 9v 7v
8 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 figure 5. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 10 20 30 40 50 60 70 80 90 v ge =20v 15v 13v 11v 9v 7v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 0 2 4 6 8 10 0 15 30 45 60 t j =25c t j =175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 i c =19a i c =38a i c =76a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (ind.load, t j =175c, v ce =400v, v ge =15/0v, r g =10.5 ,testcircuitinfig.e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 5 10 15 20 25 30 35 40 45 50 55 60 65 1 10 100 t d(off) t f t d(on) t r
9 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 figure 9. typicalswitchingtimesasafunctionofgate resistor (ind.load, t j =175c, v ce =400v, v ge =15/0v, i c =30a,testcircuitinfig.e) r g ,gateresistor[ ] t ,switchingtimes[ns] 0 10 20 30 40 50 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (ind.load, v ce =400v, v ge =15/0v, i c =30a, r g =10.5 ,testcircuitinfig.e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 10 100 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0,48ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 0.0 1.0 2.0 3.0 4.0 5.0 6.0 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load, t j =175c, v ce =400v, v ge =15/0v, r g =10.5 ,testcircuitinfig.e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 10 20 30 40 50 60 0 1 2 3 4 5 e off e on e ts
10 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 figure 13. typicalswitchingenergylossesasa functionofgateresistor (ind.load, t j =175c, v ce =400v, v ge =15/0v, i c =30a,testcircuitinfig.e) r g ,gateresistor[ ] e ,switchingenergylosses[mj] 0 10 20 30 40 50 0 1 2 3 4 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (indload, v ce =400v, v ge =15/0v, i c =30a, r g =10.5 ,testcircuitinfig.e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load, t j =175c, v ge =15/0v, i c =30a, r g =10.5 ,testcircuitinfig.e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 300 350 400 450 500 550 600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e off e on e ts figure 16. typicalgatecharge ( i c =30a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 120v 480v
11 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 c ies c oes c res figure 18. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t j =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 12 13 14 15 16 17 18 19 20 0 50 100 150 200 250 figure 19. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 400v,startat t j 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 0 2 4 6 8 10 12 14 16 figure 20. typicaligbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 1e-4 0.001 0.01 0.1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: i [s]: 1 0.01683439 3.1e-5 2 0.09776416 1.8e-4 3 0.1309769 1.9e-3 4 0.2343649 0.01018811 5 0.02236283 0.07263209 6 1.3e-3 1.842143
12 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 package drawing pg-to247-3
13 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
14 IGW30N60TP trenchstop tm p erformance series rev.2.1,2016-02-05 revisionhistory IGW30N60TP revision:2016-02-05,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.1 - release of final datasheet publishedby infineontechnologiesag 81726mnchen,germany ?infineontechnologiesag2016. allrightsreserved. importantnotice theinformationgiveninthisdocumentshallinnoevent beregardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie).withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,infineontechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof theproductofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityof customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest infineontechnologiesoffice(www.infineon.com). pleasenotethatthisproductisnot qualifiedaccordingtotheaecq100oraecq101documentsoftheautomotive electronicscouncil. warnings duetotechnicalrequirementsproductsmaycontaindangeroussubstances.forinformationonthetypesinquestion pleasecontactyournearestinfineontechnologiesoffice. exceptasotherwiseexplicitlyapprovedbyinfineontechnologiesinawrittendocumentsignedbyauthorized representativesofinfineontechnologies,infineontechnologiesproductsmaynot beusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.

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